G&W Tsinghua T-2.6F
- Kompletní specifikace
- G&W Tsinghua T-2.6FNení skladem14 900,00 Kč12 314,05 Kč bez DPH
Input Sensitivity: 150mV
Frequency response: 10Hz ~ 208KHz (-3dB)
Signal to Noise Ratio: 101dB (output 15Vrms reference value)
Harmonic Distortion: 0.05% (10Vrms, 1KHz)
Tube: 6922EH made in Russia (or ECC88, 6H23)
Output power: 1000mW (20Hz ~ 20KHz)
Adapter headphone impedance: 32Ω ~ 600Ω
Static power consumption: about 60W
Dimension: 350 × width 220 × depth 130mm high
Net weight: 7Kg
Shipping weight: 8kg
Power supply: 110/220V
10mm thick front panel with silver brushed aluminum panels, rear panel black brushed aluminum board.
Double layer of stainless steel chassis processed.
Aluminum precision machined using aluminum solid black knob.
Using a special mold professional headphone output socket, outlet surface engraved with "G & W 'convex words, the thickness of the internal reed 1mm.
A Russian tube 6922EH (or ECC88, 6H23) for voltage amplification, the advantage of wide frequency response, low output impedance, good transient response.
After the panel is black brushed aluminum plate
Hitachi of Japan to do 2SK214/2SJ77 complementary push-pull FET source-level output, low internal resistance, good linearity. 2SK214/2SJ77 close to the bottom surface of the casing at the top of the radiator, no-lead the workers.
Power supply using the EI-type iron-core inductor plus ruby electrolytic capacitors do π-type filter.
Power supply were used around the road super-regulator power supply, so that separation has been greatly improved.
Imports of 70mm thick copper thin double-sided gold-plated printed circuit board.
Use WIMA, ERO fever and other world famous brand capacitors.
Of Japan ALPS 2 × 100K (A) blue high-grade plastic potentiometer.
High-voltage DC power supply using slow-start delay, to extend tube life.
Power protection function with mute, delay 20 seconds into working condition.
To promote the 32 ~ 600W of imported luxury headphones.
Do use tube pre-amplifier circuit, the gain of about 23.5dB promote any tube and transistor-level power amplifier can achieve after the very good results.